SELECTIVE VAPOR-PHASE DEPOSITION ON PATTERNED SUBSTRATES

[1] INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 102 (04) : 327 - 343

[2] A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY [J]. THIN SOLID FILMS, 1987, 153 : 469 - 478

[3] AHN KY, 1988, 1987 P WORKSH TUNGST, P25

[4] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200

[5] SELECTIVE AREA GROWTH OF INP INGAAS MULTIPLE QUANTUM WELL LASER STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 97 - 98

[6] SELECTIVE AREA GROWTH OF INDIUM-PHOSPHIDE BASED HETEROSTRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 167 - 170

[7] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 425 - 433

[8] LATERAL GROWTH-PROCESS OF GAAS OVER TUNGSTEN GRATINGS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2445 - 2453

[9] SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 229 - 234

[10] DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 35 - 41

[1] INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 102 (04) : 327 - 343

[2] A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY [J]. THIN SOLID FILMS, 1987, 153 : 469 - 478

[3] AHN KY, 1988, 1987 P WORKSH TUNGST, P25

[4] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200

[5] SELECTIVE AREA GROWTH OF INP INGAAS MULTIPLE QUANTUM WELL LASER STRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 97 - 98

[6] SELECTIVE AREA GROWTH OF INDIUM-PHOSPHIDE BASED HETEROSTRUCTURES BY METALORGANIC MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 167 - 170

[7] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 425 - 433

[8] LATERAL GROWTH-PROCESS OF GAAS OVER TUNGSTEN GRATINGS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2445 - 2453

[9] SELECTIVE MOCVD EPITAXY FOR OPTOELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 229 - 234

[10] DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 35 - 41