SELECTIVE VAPOR-PHASE DEPOSITION ON PATTERNED SUBSTRATES

[91] SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L66 - L69

[92] AREA SELECTIVE CHEMICAL VAPOR-DEPOSITION OF BORON-CARBIDE ACHIEVED BY MOLECULAR MASKING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1733 - 1735

[93] PHASE-SELECTIVE CHEMICAL VAPOR-DEPOSITION OF BORON-CARBIDE BY NUCLEATION CONTROL ON PATTERNED SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06): : 3172 - 3175

[94] JANSSON U, IN PRESS PHASE SELEC

[95] GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2645 - 2647

[96] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1571 - 1580

[97] SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 493 - 526

[98] JASTRZEBSKI L, 1984, SOLID STATE TECHNOL, V27, P234

[99] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P398

[100] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P334

[91] SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L66 - L69

[92] AREA SELECTIVE CHEMICAL VAPOR-DEPOSITION OF BORON-CARBIDE ACHIEVED BY MOLECULAR MASKING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1733 - 1735

[93] PHASE-SELECTIVE CHEMICAL VAPOR-DEPOSITION OF BORON-CARBIDE BY NUCLEATION CONTROL ON PATTERNED SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06): : 3172 - 3175

[94] JANSSON U, IN PRESS PHASE SELEC

[95] GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2645 - 2647

[96] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1571 - 1580

[97] SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 493 - 526

[98] JASTRZEBSKI L, 1984, SOLID STATE TECHNOL, V27, P234

[99] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P398

[100] JASTRZEBSKI L, 1987, 10TH P INT C CVD, P334