SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS

被引：13

作者：

IWASAKI, T

MATSUO, N

MATSUMOTO, N

KASHIWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.L66

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L66 / L69

页数：4

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[6] MORI Y, 1982, I PHYS C SER, V63, P95
[7] SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY
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[8] TRANSVERSE-MODE CONTROL AND REDUCTION OF THRESHOLD CURRENT IN (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH A BURIED OPTICAL GUIDE
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[9] HIGH-POWER, LOW-THRESHOLD BH LASERS OPERATING AT 1.52-MUM GROWN ENTIRELY BY MOVPE
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[10] SELECTIVE MOCVD GROWTH OF GAALAS ON PARTLY MASKED SUBSTRATES AND ITS APPLICATION TO OPTOELECTRONIC DEVICES
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