SELECTIVE VAPOR-PHASE DEPOSITION ON PATTERNED SUBSTRATES

[31] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[32] BULATOV OS, 1971, INORGANIC MAT, V9, P169

[33] FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1195 - 1200

[34] CARLSSON J, UNPUB

[35] THERMODYNAMIC INVESTIGATION OF SELECTIVE TUNGSTEN CHEMICAL VAPOR-DEPOSITION - INFLUENCE OF GROWTH-CONDITIONS AND GAS ADDITIVES ON THE SELECTIVITY IN THE FLUORIDE PROCESS [J]. THIN SOLID FILMS, 1988, 158 (01) : 107 - 122

[36] SELECTIVE DEPOSITION OF TUNGSTEN - PREDICTION OF SELECTIVITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2298 - 2302

[37] THERMOCHEMICAL MODELING OF INTERFACIAL REACTIONS AND SELECTIVE DEPOSITION AT GROWTH FROM THE VAPOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1656 - 1662

[38] CARLSSON JO, 1988, 13TH P NORD SEM M, P298

[39] Chane J. P., 1972, Journal of Crystal Growth, V13-14, P325, DOI 10.1016/0022-0248(72)90178-9

[40] PROPERTIES OF TISI2 AS AN ENCROACHMENT BARRIER FOR THE GROWTH OF SELECTIVE TUNGSTEN ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1730 - 1735

[31] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[32] BULATOV OS, 1971, INORGANIC MAT, V9, P169

[33] FILM THICKNESS DEPENDENCE OF SILICON REDUCED LPCVD TUNGSTEN ON NATIVE OXIDE THICKNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1195 - 1200

[34] CARLSSON J, UNPUB

[35] THERMODYNAMIC INVESTIGATION OF SELECTIVE TUNGSTEN CHEMICAL VAPOR-DEPOSITION - INFLUENCE OF GROWTH-CONDITIONS AND GAS ADDITIVES ON THE SELECTIVITY IN THE FLUORIDE PROCESS [J]. THIN SOLID FILMS, 1988, 158 (01) : 107 - 122

[36] SELECTIVE DEPOSITION OF TUNGSTEN - PREDICTION OF SELECTIVITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2298 - 2302

[37] THERMOCHEMICAL MODELING OF INTERFACIAL REACTIONS AND SELECTIVE DEPOSITION AT GROWTH FROM THE VAPOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1656 - 1662

[38] CARLSSON JO, 1988, 13TH P NORD SEM M, P298

[39] Chane J. P., 1972, Journal of Crystal Growth, V13-14, P325, DOI 10.1016/0022-0248(72)90178-9

[40] PROPERTIES OF TISI2 AS AN ENCROACHMENT BARRIER FOR THE GROWTH OF SELECTIVE TUNGSTEN ON SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1730 - 1735