OPTIMIZATION OF A SCHOTTKY-BARRIER MIXER DIODE IN THE SUBMILLIMETER-WAVE REGION

被引:18
作者
NOZOKIDO, T [1 ]
CHANG, JJ [1 ]
MANN, CM [1 ]
SUZUKI, T [1 ]
MIZUNO, K [1 ]
机构
[1] TOHOKU UNIV,ELECT COMMUN RES INST,AOBA KU,SENDAI,MIYAGI 980,JAPAN
来源
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1994年 / 15卷 / 11期
关键词
D O I
10.1007/BF02096055
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs.
引用
收藏
页码:1851 / 1865
页数:15
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