ULTRAVIOLET-LASER ABLATION OF SI3N4 THIN-FILMS

被引:6
作者
TAKIGAWA, Y
HEMMINGER, JC
机构
[1] UNIV CALIF IRVINE, DEPT CHEM, IRVINE, CA 92717 USA
[2] OSAKA ELECTROCOMMUN UNIV, DEPT SOLID STATE ELECTR, NEYAGAWA, OSAKA 572, JAPAN
关键词
D O I
10.1016/0169-4332(94)90403-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A Fourier transform ion cyclotron resonance mass spectrometer (FTMS) is used to identify species ejected from amorphous Si3N4 film surfaces when high-power ArF excimer laser pulses hit them. Two peaks of Si+ and (Si3N4)2+ ions in the spectra are obtained with the laser pulses having fluence greater than 40 mJ/cm2. The advantage of high mass resolution enables us to identify Si+ peaks in spite of the fact that Si+ (m/q = 27.976928) and N2+ (m/q = 28.0056) ions are discriminated by introducing CO+ (m/q = 27.9949) ions. We find, however, that when a large amount of ions are stored in the cell of FTMS, accurate numbers of ions are not obtained due to a space charge effect.
引用
收藏
页码:146 / 151
页数:6
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