HYDROGEN PARTICLE DIAGNOSTIC BASED ON PD-MOS DIODE-ARRAYS

被引：7

作者：

BASTASZ, R ^{[1
]}

HUGHES, RC ^{[1
]}

机构：

[1] SANDIA NATL LABS,LIVERMORE,CA 94550

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1988年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.1140042

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1884 / 1886

页数：3

共 13 条

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[5]

HUGHES RC, IN PRESS J APPL PHYS

[6]

Lundstrom I., 1985, SOLID STATE CHEM SEN, P2

[7] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J].

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SVENSSON, CM .

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[8]

MYERS SM, 1987, 3RD P INT C ENV DEGR, P159

[9] ULTRAHIGH-VACUUM STUDIES OF PD METAL-INSULATOR SEMICONDUCTOR DIODE H-2 SENSORS [J].

RYE, RR ;

RICCO, AJ .

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[10] HYDROGEN LEAK DETECTOR USING A PD-GATE MOS-TRANSISTOR [J].

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SVENSSON, C .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (09) :1206-1208

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