CONCENTRATION PROFILES OF COMPOSING IONS IN RADIO-FREQUENCY SPUTTERED SR (ZR0.2TI0.8)O3 FILMS

被引:5
作者
MATSUOKA, T
KUWATA, J
FUJITA, Y
ABE, A
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D O I
10.1063/1.341488
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O59 [应用物理学];
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页码:3512 / 3515
页数:4
相关论文
共 7 条
[1]   AES STUDY ON THE CHEMICAL-COMPOSITION OF FERROELECTRIC BATIO3 THIN-FILMS RF SPUTTER-DEPOSITED ON SILICON [J].
DHARMADHIKARI, VS ;
GRANNEMANN, WW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :483-485
[2]  
FUJITA Y, 1984, P SID, V25, P177
[3]   THIN-FILM ELECTROLUMINESCENT DEVICE EMPLOYING TA2O5 RF SPUTTERED INSULATING FILM [J].
KOZAWAGUCHI, H ;
TSUJIYAMA, B ;
MURASE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (07) :1028-1031
[4]  
KUWATA J, 1985, JPN J APPL PHYS, V24, P413
[5]   LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES [J].
OKAMOTO, K ;
NASU, Y ;
HAMAKAWA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) :698-702
[6]  
RASE DE, 1955, J AM CERAM SOC, V38, P111
[7]  
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