GROWTH OF INN ON GAAS SUBSTRATES BY THE REACTIVE EVAPORATION METHOD

[1] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[2] LIQUIDUS CALCULATIONS FOR III-N-SEMICONDUCTORS [J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1984, 8 (04): : 343 - 354

[3] Marasina L. A., 1977, Kristall und Technik, V12, P541, DOI 10.1002/crat.19770120603

[4] HERSTELLUNG DER NITRIDE VON BOR, ALUMINIUM, GALLIUM UND INDIUM NACH DEM AUFWACHSVERFAHREN [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 298 (1-2): : 22 - 33

[5] TAKAI O, 1982, 7TH P INT C VAC MET, P137

[6] TAKAI O, 1982, 7TH P INT C VAC MET, P129

[7] OPTICAL BAND-GAP OF INDIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3241 - 3244

[8] HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 709 - 711

[1] ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED GAN AND INN [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 71 - &

[2] LIQUIDUS CALCULATIONS FOR III-N-SEMICONDUCTORS [J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1984, 8 (04): : 343 - 354

[3] Marasina L. A., 1977, Kristall und Technik, V12, P541, DOI 10.1002/crat.19770120603

[4] HERSTELLUNG DER NITRIDE VON BOR, ALUMINIUM, GALLIUM UND INDIUM NACH DEM AUFWACHSVERFAHREN [J]. ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1959, 298 (1-2): : 22 - 33

[5] TAKAI O, 1982, 7TH P INT C VAC MET, P137

[6] TAKAI O, 1982, 7TH P INT C VAC MET, P129

[7] OPTICAL BAND-GAP OF INDIUM NITRIDE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3241 - 3244

[8] HETEROEPITAXIAL GROWTH OF INN BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (08) : 709 - 711