EFFECTS OF RAPID THERMAL ANNEALING AND SIO2 ENCAPSULATION ON GAINAS/ALINAS HETEROSTRUCTURES

被引：19

作者：

OBRIEN, S

SHEALY, JR

BOUR, DP

ELBAUM, L

CHI, JY

机构：

[1] DAVID SARNOFF RES CTR,CN 5300,PRINCETON,NJ 08543

[2] GTE LABS INC,WALTHAM,MA 02254

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期

关键词：

D O I：

10.1063/1.103204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Substantial blue shifts in the transition energies of GaInAs/AlInAs single quantum wells were observed due to localized SiO2 capping and rapid thermal annealing at temperatures between 750 and 900°C. In contrast to previously reported results, regions capped with SiO2 exhibited blue shifts up to 74 meV while regions with no SiO2 showed minimal shifting. With this band-gap change, a lateral index change of approximately -0.6% is anticipated making this process suitable for index-guided lasers. Samples also exhibited up to 15-fold increases in PL efficiencies due to the annealing process. The dependence of energy shifts and PL efficiencies is studied by measuring room-temperature and low-temperature photoluminescence.

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页码：1365 / 1367

页数：3

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