COMPOSITIONAL DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS MULTIQUANTUM WELL STRUCTURES BY REPETITIVE RAPID THERMAL ANNEALING

被引：17

作者：

MIYAZAWA, T

SUZUKI, Y

KAWAMURA, Y

ASAI, H

MIKAMI, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.L730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L730 / L733

页数：4

共 16 条

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[2] IMPURITY-INDUCED LAYER DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (23) :2302-2304

[3] MODIFICATION OF EXCITON EMISSION ENERGIES IN INGAAS/ALLNAS QUANTUM WELLS BY RAPID THERMAL ANNEALING [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (22) :2185-2187

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[5] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

EPLER, JE ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL ;

BASHAW, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1447-1449

[6] OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE [J].

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WAKITA, K ;

ASAHI, H .

ELECTRONICS LETTERS, 1985, 21 (09) :371-373

[7] DISORDERING BY ZN-DIFFUSION OF INGAAS/INALAS MQW SUPERLATTICE STRUCTURE GROWN BY MBE [J].

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ASAHI, H ;

KOHZEN, A ;

WAKITA, K .

ELECTRONICS LETTERS, 1985, 21 (06) :218-219

[8] SIMS STUDY OF COMPOSITIONAL DISORDERING IN SI ION-IMPLANTED ALGAAS-GAAS SUPERLATTICE [J].

KOBAYASHI, J ;

NAKAJIMA, M ;

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[9]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[10] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (05) :549-551

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