FEMTOSECOND RELAXATION OF PHOTOEXCITED HOLES IN BULK GALLIUM-ARSENIDE

被引：20

作者：

CHEBIRA, A

CHESNOY, J

GALE, GM

机构：

[1] Laboratoire d'Optique Quantique, Ecole Polytechnique

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.46.4559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relaxation to the top of the valence band of nonequilibrium photoexcited holes in n-type doped bulk gallium arsenide at 77 K is selectively measured by a femtosecond luminescence up-conversion technique. In the low-excitation regime, hole decay times between 560 and 330 fs are observed for fully-ionized-donor concentrations in the range 6 X 10(17) to 2.4 X 10(18) cm-3 . The theoretical treatment of weakly photoexcited n-type GaAs displays certain simplifications when compared with earlier work, as both the lattice and the electron bath are in thermodynamic equilibrium, and the results of a simulation invoking hole-LO-phonon and hole-electron interactions give good agreement with experiment.

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页码：4559 / 4563

页数：5

相关论文

共 12 条

[1] FEMTOSECOND INTERVALLEY SCATTERING IN GAAS [J].

BECKER, PC ;

FRAGNITO, HL ;

CRUZ, CHB ;

SHAH, J ;

FORK, RL ;

CUNNINGHAM, JE ;

HENRY, JE ;

SHANK, CV .

APPLIED PHYSICS LETTERS, 1988, 53 (21) :2089-2090

[2]

CHEBIRA A, THESIS U PARIS SUD O

[3] INITIAL THERMALIZATION OF PHOTOEXCITED CARRIERS IN GAAS STUDIED BY FEMTOSECOND LUMINESCENCE SPECTROSCOPY [J].

ELSAESSER, T ;

SHAH, J ;

ROTA, L ;

LUGLI, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1757-1760

[4] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[5] NONEQUILIBRIUM ELECTRON-HOLE PLASMA IN GAAS QUANTUM-WELLS [J].

HOPFEL, RA ;

SHAH, J ;

GOSSARD, AC .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :765-768

[6] SUBPICOSECOND TIME-RESOLVED RAMAN-SPECTROSCOPY OF LO PHONONS IN GAAS [J].

KASH, JA ;

TSANG, JC ;

HVAM, JM .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2151-2154

[7] FEMTOSECOND ABSORPTION SATURATION STUDIES OF HOT CARRIERS IN GAAS AND ALGAAS [J].

LIN, WZ ;

SCHOENLEIN, RW ;

FUJIMOTO, JG ;

IPPEN, EP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :267-275

[8] SUBPICOSECOND FLUORESCENCE DYNAMICS OF DYE MOLECULES [J].

MOKHTARI, A ;

CHEBIRA, A ;

CHESNOY, J .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (08) :1551-1557

[9] MONTE-CARLO INVESTIGATION OF THE ELECTRON-HOLE-INTERACTION EFFECTS ON THE ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GAAS [J].

OSMAN, MA ;

FERRY, DK .

PHYSICAL REVIEW B, 1987, 36 (11) :6018-6032

[10] DETERMINATION OF INTERVALLEY SCATTERING RATES IN GAAS BY SUBPICOSECOND LUMINESCENCE SPECTROSCOPY [J].

SHAH, J ;

DEVEAUD, B ;

DAMEN, TC ;

TSANG, WT ;

GOSSARD, AC ;

LUGLI, P .

PHYSICAL REVIEW LETTERS, 1987, 59 (19) :2222-2225