DETERMINATION OF CRYSTALLOGRAPHIC POLARITY OF CDTE CRYSTALS WITH AUGER-ELECTRON SPECTROSCOPY

被引：23

作者：

LU, YC ^{[1
]}

STAHLE, CM ^{[1
]}

MORIMOTO, J ^{[1
]}

BUBE, RH ^{[1
]}

FEIGELSON, RS ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：924 / 927

页数：4

共 25 条

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[2] SURFACE DAMAGE OF CDTE PRODUCED DURING SAMPLE PREPARATION, AND DETERMINATION OF DISLOCATION TYPES NEAR MICROHARDNESS INDENTATIONS
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[3] SURFACE PASSIVATION AND OXIDATION OF CADMIUM TELLURIDE AND PROPERTIES OF METAL-OXIDE-CDTE STRUCTURES
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[4] AUGER-ELECTRON SPECTROSCOPIC STUDY OF THE ETCHING OF CADMIUM TELLURIDE AND CADMIUM MANGANESE TELLURIDE
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[5] CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE
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[6] ETCHING OF CADMIUM TELLURIDE
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[7] STUDY OF CLEAVED, OXIDIZED, ETCHED, AND HEAT-TREATED CDTE SURFACES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1469 - 1472
[8] SURFACE-MORPHOLOGY OF CDTE-FILMS GROWN ON CDTE (111) SUBSTRATES BY ATOMIC LAYER EPITAXY
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[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) : 403 - 406
[9] POLARITY DETERMINATION OF CDTE(111) ORIENTATION GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (14) : 908 - 910
[10] ETCH PITS AND POLARITY IN CDTE CRYSTALS
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