OPTICAL TECHNIQUES IN PLASMA DIAGNOSTICS

[51] INFRARED DIODE-LASER SPECTROSCOPY OF THE NS RADICAL [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1980, 84 (01) : 68 - 73

[52] EXCITATION TEMPERATURES IN THE HOLLOW-CATHODE DISCHARGE [J]. APPLIED SPECTROSCOPY, 1981, 35 (01) : 66 - 69

[53] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[54] A SENSITIVE, NONINTRUSIVE POINT DIAGNOSTIC FOR ATOMIC CHLORINE USING COHERENT ANTI-STOKES RAMAN-SCATTERING [J]. CHEMICAL PHYSICS LETTERS, 1982, 89 (02) : 131 - 134

[55] ANALYSIS OF THE TRANSLATIONAL ENERGY-DISTRIBUTION OF H-STAR PRODUCED IN THE E-H2 COLLISION [J]. CHEMICAL PHYSICS LETTERS, 1979, 65 (03) : 610 - 612

[56] DETERMINATION OF PLASMA GAS TEMPERATURE DURING REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1157 - 1158

[57] Pang S., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P161

[58] INSITU ANALYSIS OF FLUORINATED GASES IN PLASMA-ETCHING BY INFRARED-SPECTROSCOPY [J]. APPLIED SPECTROSCOPY, 1982, 36 (04) : 445 - 451

[59] GAS ROTATIONAL TEMPERATURE IN AN RF PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 460 - 464

[60] ROBB FY, 1983, MAY EL SOC M SAN FRA

[51] INFRARED DIODE-LASER SPECTROSCOPY OF THE NS RADICAL [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1980, 84 (01) : 68 - 73

[52] EXCITATION TEMPERATURES IN THE HOLLOW-CATHODE DISCHARGE [J]. APPLIED SPECTROSCOPY, 1981, 35 (01) : 66 - 69

[53] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[54] A SENSITIVE, NONINTRUSIVE POINT DIAGNOSTIC FOR ATOMIC CHLORINE USING COHERENT ANTI-STOKES RAMAN-SCATTERING [J]. CHEMICAL PHYSICS LETTERS, 1982, 89 (02) : 131 - 134

[55] ANALYSIS OF THE TRANSLATIONAL ENERGY-DISTRIBUTION OF H-STAR PRODUCED IN THE E-H2 COLLISION [J]. CHEMICAL PHYSICS LETTERS, 1979, 65 (03) : 610 - 612

[56] DETERMINATION OF PLASMA GAS TEMPERATURE DURING REACTIVE SPUTTER ETCHING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) : 1157 - 1158

[57] Pang S., 1983, Laser Diagnostics and Photochemical Processing for Semiconductor Devices. Proceedings of a Symposium, P161

[58] INSITU ANALYSIS OF FLUORINATED GASES IN PLASMA-ETCHING BY INFRARED-SPECTROSCOPY [J]. APPLIED SPECTROSCOPY, 1982, 36 (04) : 445 - 451

[59] GAS ROTATIONAL TEMPERATURE IN AN RF PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : 460 - 464

[60] ROBB FY, 1983, MAY EL SOC M SAN FRA