EVALUATION OF FERMI-LEVEL IN DOPED FILMS OF A-SIC-H BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引:7
作者
FUKADA, N [1 ]
FUKUSHIMA, Y [1 ]
IMURA, T [1 ]
HIRAKI, A [1 ]
机构
[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983年 / 22卷 / 11期
关键词
D O I
10.1143/JJAP.22.L745
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L745 / L747
页数:3
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