STRUCTURAL STABILITY OF ZN-CONTAINING II-VI SEMICONDUCTOR ALLOYS - MICROHARDNESS CALCULATIONS

被引:8
作者
EKPENUMA, SN
MYLES, CW
机构
[1] Department of Physics and Engineering Physics, Texas Tech University, Lubbock, Texas
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 01期
关键词
D O I
10.1116/1.578138
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The lattice strengthening effects of the addition of ZnTe to HgTe, CdTe, and HgCdTe are investigated using a solid-solution hardening model. The microstructural hardnesses of the resulting alloys HgZnTe, CdZnTe, and HgCdZnTe are calculated and compared with that of HgCdTe obtained in the same model. Good agreement with available experimental data is obtained for the hardness variation with composition for CdZnTe, HgZnTe, and HgCdTe. These calculations show that the alloys containing Zn have superior hardnesses to HgCdTe. They thus verify the experimental observation that these alloys are structurally superior to HgCdTe. The microhardness of HgCdZnTe for a fixed Cd composition of 0.2 is predicted to be slightly greater than that of HgZnTe for all Zn compositions. On the other hand, for simultaneous variation of the Cd and Zn compositions such that the band gap is constant and in the infrared regime, HgZnTe is predicted to always be harder than HgCdZnTe.
引用
收藏
页码:208 / 216
页数:9
相关论文
共 43 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]  
[Anonymous], 1968, THEORY DISLOCATIONS
[3]   ELECTRONIC AND TRANSPORT-PROPERTIES OF HGCDTE AND HGZNTE [J].
BERDING, MA ;
KRISHNAMURTHY, S ;
SHER, A ;
CHEN, AB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3014-3018
[4]   SILICON AND INDIUM DOPING OF GAAS - MEASUREMENTS OF THE EFFECT OF DOPING ON MECHANICAL-BEHAVIOR AND RELATION WITH DISLOCATION FORMATION [J].
BOURRET, ED ;
TABACHE, MG ;
BEEMAN, JW ;
ELLIOT, AG ;
SCOTT, M .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :275-281
[5]   THE MICROHARDNESS OF CDXHGI-XTE [J].
COLE, S ;
BROWN, M ;
WILLOUGHBY, AFW .
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (07) :2061-2066
[6]   THE MECHANICAL-PROPERTIES OF CDXHG1-XTE [J].
COLE, S ;
WILLOUGHBY, AFW ;
BROWN, M .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :370-374
[7]  
COLOMBO L, COMMUNICATION
[8]  
COLOMBO L, 1984, UNPUB P IRIS DETECTO
[9]  
DORNHAUS R, 1976, SOLID STATE PHYSICS, V78
[10]   MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].
EHRENREICH, H ;
HIRTH, JP .
APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670