ELECTRON-INDUCED EXTENDED-FINE-STRUCTURE MEASUREMENTS OF THIN-FILM GROWTH AND REACTION

被引：20

作者：

IDZERDA, YU

WILLIAMS, ED

EINSTEIN, TL

PARK, RL

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.36.5941

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5941 / 5948

页数：8

共 55 条

TEO, BK ;

LEE, PA .

[52] LOW-TEMPERATURE MATERIAL REACTION AT THE TI/SI(111) INTERFACE [J].

TROMP, RM ;

RUBLOFF, GW ;

VANLOENEN, EJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :865-868

TYLISZCZAK, T ;

HITCHCOCK, AP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1372-1375

[54] INITIAL GROWTH OF TI ON SI [J].

VAHAKANGAS, J ;

IDZERDA, YU ;

WILLIAMS, ED ;

PARK, RL .

PHYSICAL REVIEW B, 1986, 33 (12) :8716-8723

[55]

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