R-I PROFILING - NEW TECHNIQUE FOR MEASURING SEMICONDUCTOR DOPING PROFILES

被引：1

作者：

GLOVER, GH ^{[1
]}

TANTRAPORN, W ^{[1
]}

机构：

[1] GE, RES & DEV CTR, POB 8, SCHENECTADY, NY 12301 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 06期

关键词：

D O I：

10.1063/1.1655503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：348 / 349

页数：2

共 11 条

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[8] METHOD FOR MEASURING IMPURITY DISTRIBUTIONS IN SEMICONDUCTOR CRYSTALS [J].

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[9] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J].

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[10] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J].

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