INCLUSION OF MULTIPLE REFLECTIONS IN THEORY OF FARADAY EFFECT IN SEMICONDUCTORS

被引：50

作者：

DONOVAN, B

MEDCALF, T

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1964年 / 15卷 / 10期

关键词：

D O I：

10.1088/0508-3443/15/10/301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1139 / &

共 11 条

[1] MEASUREMENT OF FREE CARRIER FARADAY EFFECT IN N-TYPE GERMANIUM AT MICROWAVE FREQUENCIES
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[2] MICROWAVE FREE CARRIER FARADAY EFFECT IN SEMICONDUCTORS--PERTURBATION THEORY FOR GUIDED WAVES
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[J]. PHYSICA, 1962, 28 (11): : 1143 - &
[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
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CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[4] THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS
DONOVAN, B
WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (507): : 46 - &
[5] THE INCLUSION OF MULTIPLE REFLECTIONS IN THE FORMULATION OF THE FARADAY EFFECT IN SEMICONDUCTORS
DONOVAN, B
MEDCALF, T
[J]. PHYSICS LETTERS, 1963, 7 (05): : 304 - 306
[6] NOTE ON FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS
DONOVAN, B
WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (511): : 1081 - &
[7] FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS
DONOVAN, B
WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503): : 120 - &
[8] MAGNETIC-FIELD DEPENDENCE OF FREE-CARRIER ABSORPTION IN SEMICONDUCTORS
FURDYNA, JK
BRODWIN, ME
[J]. PHYSICAL REVIEW, 1963, 132 (01): : 97 - &
[9] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
FURDYNA, JK
BROERSMA, S
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1995 - 2003
[10] INFRA-RED FARADAY EFFECT IN N-TYPE ALSB + GAP + IN UNDOPED GAP
MOSS, TS
ELLIS, B
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5322): : 217 - &