MEASUREMENT OF FREE CARRIER FARADAY EFFECT IN N-TYPE GERMANIUM AT MICROWAVE FREQUENCIES

被引：25

作者：

BOUWKNEGT, A

VOLGER, J

机构：

来源：

PHYSICA | 1964年 / 30卷 / 01期

关键词：

D O I：

10.1016/0031-8914(64)90206-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：113 / &

共 15 条

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[3] THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS
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WEBSTER, J
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[4] FARADAY EFFECT IN NON-DEGENERATE SEMICONDUCTORS
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WEBSTER, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (503): : 120 - &
[5] THEORY OF FARADAY EFFECT IN ANISOTROPIC SEMICONDUCTORS .2. APPLICATION TO N-TYPE GERMANIUM
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (519): : 90 - &
[6] DEPENDENCE OF FREE-CARRIER FARADAY ELLIPTICITY IN SEMICONDUCTORS ON SCATTERING MECHANISMS
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[J]. PHYSICAL REVIEW, 1961, 124 (03): : 740 - &
[7] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
FURDYNA, JK
BROERSMA, S
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1995 - 2003
[8] MICROWAVE HALL EFFECT IN GERMANIUM AND SILICON AT 20 KMC-S
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GARTNER, WW
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 329 - 332
[9] HAMBLETON GE, 1959, P S MILLIMETER WAVES, P87
[10] Pauw LJvd A, 1958, PHILIPS RES REP, V13, P1