MEASUREMENTS OF ETCH RATE AND FILM STOICHIOMETRY VARIATIONS DURING PLASMA-ETCHING OF LEAD-LANTHANUM-ZIRCONIUM-TITANATE THIN-FILMS

被引：26

作者：

POOR, MR

FLEDDERMANN, CB

机构：

[1] Center for High Technology Materials, University of New Mexico, Albuquerque

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasma etching of lead-lanthanum-zirconium-titanate (PLZT) ferroelectric thin films using a dc hollow-cathode discharge in CF4 and dilute HCl has been investigated. The etch rate and film stoichiometry variations of sputter-deposited lead-lanthanum-titanate (PLT), and solution-deposited PLT, lead-zirconium-titanate (PZT), and PLZT have been measured over a wide range of etching conditions. Etching does not take place at room temperature, but requires substrate heating above 200-degrees-C. Etch rate and film stoichiometry varied strongly as a function of substrate temperature, gas mixture, and film preparation method. For sputter-deposited films, the fastest etch rates of 6500 angstrom/h were obtained using a mixture of CF4 and dilute HCl. Etch rates for solution-deposited films were higher than for sputter-deposited films, reaching 2000 angstrom/min in CF4.

引用

页码：3385 / 3387

页数：3

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