SPIN POLARIZED PHOTOEMISSION FROM GAAS AND GE - TEMPERATURE-DEPENDENCE OF THE THRESHOLD POLARIZATION

被引:11
作者
ALLENSPACH, R
MEIER, F
PESCIA, D
机构
关键词
D O I
10.1063/1.94659
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1107 / 1109
页数:3
相关论文
共 14 条
[11]   ELECTRON-SPIN POLARIZATION IN THE PHOTOEMISSION OF NEA GAAS1-XPX [J].
REICHERT, E ;
ZAHRINGER, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (04) :191-193
[12]  
ROUGEOT H, 1979, ADV ELECTRON EL PHYS, V48, P1
[13]  
SINCLAIR CK, 1981, HIGH ENERG PHYS, P27
[14]   UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY ;
CHYE, P .
PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423