A HIGH ASPECT-RATIO 0.1 MICRON GATE TECHNIQUE FOR LOW-NOISE MESFETS

被引：7

作者：

CHAO, PC

KU, WH

NULMAN, J

机构：

[1] CORNELL UNIV, SCH ELECT ENGN, ITHACA, NY 14853 USA

[2] NATL RES & RESOURCE FACIL SUBMICRON STRUCT, ITHACA, NY 14853 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 01期

关键词：

D O I：

10.1109/EDL.1982.25461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：24 / 26

页数：3

共 8 条

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[3] EXTREMELY LOW-NOISE MESFETS FABRICATED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[4]

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[5] SUBMICROMETER LIFT-OFF LINE WITH T-SHAPED CROSS-SECTIONAL FORM [J].

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ELECTRONICS LETTERS, 1981, 17 (12) :429-430

[6] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].

OHATA, K ;

ITOH, H ;

HASEGAWA, F ;

FUJIKI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034

[7] A SIMPLE METHOD FOR FABRICATING SUB-MICRON LINES [J].

SPEIDELL, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :693-695

[8]

WHOLEY J, 1979, C SER I PHYS, V45, P270

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