THE GROWTH OF CDHGTE BY MOCVD AT REDUCED TEMPERATURES

被引：34

作者：

THOMPSON, J ^{[1
]}

MACKETT, P ^{[1
]}

SMITH, LM ^{[1
]}

COLEHAMILTON, DJ ^{[1
]}

SHENAIKHATKHATE, DV ^{[1
]}

机构：

[1] UNIV ST ANDREWS,DEPT CHEM,ST ANDREWS KY16 9ST,FIFE,SCOTLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CADMIUM MERCURY TELLURIDE (CMT) - METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) - SURFACE MORPHOLOGY;

D O I：

10.1016/0022-0248(90)90722-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：233 / 239

页数：7

共 19 条

[1]

AVERY AJ, 1987, COMMUNICATION

[2] IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT [J].

BEVAN, MJ ;

WOODHOUSE, KT .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :254-261

[3] THE EFFECT OF CDTE SUBSTRATE ORIENTATION ON THE MOVPE GROWTH OF CDXHG1-XTE [J].

HAILS, JE ;

RUSSELL, GJ ;

BRINKMAN, AW ;

WOODS, J .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :940-945

[4] LOW-TEMPERATURE METALORGANIC GROWTH OF CDTE AND HGTE FILMS USING DITERTIARYBUTYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1669-1671

[5] METALORGANIC GROWTH OF CDTE AND HGCDTE EPITAXIAL-FILMS AT A REDUCED SUBSTRATE-TEMPERATURE USING DIISOPROPYLTELLURIDE [J].

HOKE, WE ;

LEMONIAS, PJ .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :398-400

[6] METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF MERCURY CADMIUM TELLURIDE EPITAXIAL-FILMS [J].

HYLIANDS, MJ ;

THOMPSON, J ;

BEVAN, MJ ;

WOODHOUSE, KT ;

VINCENT, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2217-2225

[7] THE POTENTIAL FOR ABRUPT INTERFACES IN CDXHG1-XTE USING THERMAL AND PHOTO-MOVPE [J].

IRVINE, SJC ;

GIESS, J ;

GOUGH, JS ;

BLACKMORE, GW ;

ROYLE, A ;

MULLIN, JB ;

CHEW, NG ;

CULLIS, AG .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :437-451

[8] PHOTO-METAL ORGANIC VAPOR-PHASE EPITAXY - A LOW-TEMPERATURE METHOD FOR THE GROWTH OF CDXHG1-XTE [J].

IRVINE, SJC ;

GIESS, J ;

MULLIN, JB ;

BLACKMORE, GW ;

DOSSER, OD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1450-1455

[9] EPITAXIAL-GROWTH OF HGTE BY A MOVPE PROCESS [J].

IRVINE, SJC ;

MULLIN, JB ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) :15-20

[10] PHOTON ASSISTED OMVPE GROWTH OF CDTE [J].

KISKER, DW ;

FELDMAN, RD .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :102-107

← 1 2 →