CARRIER COMPENSATION INDUCED BY RAPID THERMAL ANNEALING IN UNDOPED INP

被引：5

作者：

KADOUN, A ^{[1
]}

BREMOND, G ^{[1
]}

BARBIER, D ^{[1
]}

LAUGIER, A ^{[1
]}

TARDY, J ^{[1
]}

机构：

[1] ECOLE CENT LYON, ELECTR LAB, CNRS, URA 848, F-69131 ECULLY, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.355807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The region beneath the interface of an InGaAs layer grown onto an undoped InP substrate by molecular beam epitaxy was investigated before and after rapid thermal annealing. Capacitance-voltage measurements revealed a depletion region in the underlying InP due to donor compensation that is mainly caused by the Fe-related E(c)-0.63 eV-deep level observed by deep level transient spectroscopy.

引用

页码：648 / 650

页数：3

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