SURFACE-TOPOGRAPHY OF LASER ANNEALED SILICON

被引：11

作者：

HANEMAN, D

NEMANICH, RJ

机构：

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 43卷 / 03期

关键词：

D O I：

10.1016/0038-1098(82)90111-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：203 / 206

页数：4

相关论文

共 10 条

[1] DYNAMICS OF Q-SWITCHED LASER ANNEALING
AUSTON, DH
GOLOVCHENKO, JA
SIMONS, AL
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 777 - 779
[2] FAUCHET PM, UNPUB
[3] Goodman J. W., 1968, INTRO FOURIER OPTICS, P69
[4] CO2 LASER-PRODUCED RIPPLE PATTERNS ON NIXP1-X SURFACES
ISENOR, NR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 148 - 150
[5] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON
LEAMY, HJ
ROZGONYI, GA
SHENG, TT
CELLER, GK
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 535 - 537
[6] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS
MARACAS, GN
HARRIS, GL
LEE, CA
MCFARLANE, RA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 453 - 455
[7] Marcuse D., 1970, ENG QUANTUM ELECTROD
[8] DEFECT PHOTO-LUMINESCENCE FROM PULSED-LASER-ANNEALED ION-IMPLANTED SI
SKOLNICK, MS
CULLIS, AG
WEBBER, HC
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 464 - 466
[9] EXPERIMENTAL TESTS FOR BOSON CONDENSATION AND SUPERCONDUCTIVITY IN SEMICONDUCTORS DURING PULSED-BEAM ANNEALING
VANVECHTEN, JA
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (12) : 1285 - 1291
[10] ZEHNER DM, 1980, SURF SCI, V92, pL67, DOI 10.1016/0039-6028(80)90205-8