ELECTRON-MICROSCOPE OBSERVATIONS OF PRECIPITATION IN BORON IMPLANTED SILICON

被引：3

作者：

COMER, JJ ^{[1
]}

ROOSILD, SA ^{[1
]}

机构：

[1] USAF,CAMBRIDGE RES LABS,HANSCOM AFB,MA 02341

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1975年 / 25卷 / 04期

关键词：

D O I：

10.1080/00337577508235401

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：275 / 277

页数：3

共 6 条

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STICKLER, R .

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[3]

Chadderton L. T., 1971, Radiation Effects, V7, P129, DOI 10.1080/00337577108232573

[4]

Davidson S. M., 1970, Radiation Effects, V6, P33, DOI 10.1080/00337577008235043

[5] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J].

MAZEY, DJ ;

NELSON, RS ;

BARNES, RS .

PHILOSOPHICAL MAGAZINE, 1968, 17 (150) :1145-&

[6] CHANNELING STUDY OF BORON-IMPLANTED SILICON [J].

NORTH, JC ;

GIBSON, WM .