HIGH-QUANTUM-EFFICIENCY PHOTOEMISSION FROM AN INGAASP PHOTOCATHODE

被引：25

作者：

ESCHER, JS ^{[1
]}

ANTYPAS, GA ^{[1
]}

EDGECUMBE, J ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.89005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：153 / 155

页数：3

相关论文

共 18 条

[11] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS
FISHER, DG
ENSTROM, RE
WILLIAMS, BF
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &
[12] FISHER DG, 1974, IEEE T ELECTRON DEVI, V21, P651
[13] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS
JAMES, LW
ANTYPAS, GA
EDGECUMBE, J
MOON, RL
BELL, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 4976 - +
[14] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP
JAMES, LW
ANTYPAS, GA
MOON, RL
EDGECUMBE, J
BELL, RL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271
[15] OPTIMIZATION OF INASXP1-X-CS2O PHOTOCATHODE
JAMES, LW
ANTYPAS, GA
UEBBING, JJ
YEP, TO
BELL, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 580 - +
[16] JAMES LW, 1971, C PHOTOELECTRIC SECO
[17] JAMES LW, 1969, 1968 P S GAAS, P230
[18] APPLICATION OF SEMICONDUCTORS WITH NEGATIVE ELECTRON AFFINITY SURFACES TO ELECTRON-EMISSION DEVICES
MARTINELLI, RU
FISHER, DG
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (10) : 1339 - 1360