HIGH-PERFORMANCE DFB-MQW LASERS AT 1.5 MU-M GROWN BY GSMBE

被引：9

作者：

PERALES, A

GOLDSTEIN, L

ACCARD, A

FERNIER, B

LEBLOND, F

GOURDAIN, C

BROSSON, P

机构：

[1] Laboratoires de Marcoussis, Centre de Recherches de la CGE, 91460 Marcoussis, Route de Nozay

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 04期

关键词：

Gallium arsenide; Indium compounds; Lasers and laser applications;

D O I：

10.1049/el:19900159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1-5μm Gain As multiquantum well distributed feedback lasers have been successfully fabricated on In P grating substrate by GSMBE. DFB mode oscillation at high output power (50mW) and narrow linewidth (1.3 MHz) have been obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：236 / 238

页数：3

共 6 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].