LOW-THRESHOLD 1.5-MU-M DFB LASER GROWN BY GSMBE

被引：7

作者：

FERNIER, B

ARTIGUE, C

BONNEVIE, D

GOLDSTEIN, L

PERALES, A

BENOIT, J

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 12期

关键词：

D O I：

10.1049/el:19890519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：768 / 770

页数：3

共 6 条

[1]

Benoit J., 1983, 9th European Conference on Optical Communication, P35

[2]

BONNEVIE D, 1989, 5TH EUR WORKSH MOL B

[3] DISTRIBUTED FEEDBACK (DFB) LASERS AT 1.5-MU-M GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE) [J].

GOLDSTEIN, L ;

ARTIGUE, C ;

BONNEVIE, D ;

FERNIER, B ;

PERALES, A ;

BENOIT, J .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :375-377

[4] EXTREMELY NARROW LINEWIDTH (APPROXIMATELY 1-MHZ) AND HIGH-POWER DFB LASERS GROWN BY MOVPE [J].

KONDO, Y ;

SATO, K ;

NAKAO, M ;

FUKUDA, M ;

OE, K .

ELECTRONICS LETTERS, 1989, 25 (03) :175-177

[5] EXTREMELY LOW-THRESHOLD 1.3 MU-M GAINASP-INP DFB PPIBH LASER [J].

OHKURA, Y ;

YOSHIDA, N ;

TAKEMOTO, A ;

KAKIMOTO, S .

ELECTRONICS LETTERS, 1988, 24 (24) :1508-1510

[6] VERY LOW THRESHOLD OPERATION OF 1.52-MU-M GALNASP/INP DFB BURIED RIDGE STRUCTURE LASER-DIODES ENTIRELY GROWN BY MOCVD [J].

TALNEAU, A ;

RONDI, D ;

KRAKOWSKI, M ;

BLONDEAU, R .

ELECTRONICS LETTERS, 1988, 24 (10) :609-611

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