ELECTRON-ENERGY LOSS SPECTROSCOPY OF SI(111)-SIMPLE-METAL INTERFACE

被引：89

作者：

ROWE, JE ^{[1
]}

MARGARITONDO, G ^{[1
]}

CHRISTMAN, SB ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.15.2195

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2195 / 2201

页数：7

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共 25 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] OPTICAL DETECTION OF SURFACE STATES ON CLEAVED (111) SURFACES OF GE
CHIAROTTI, G
DELSIGNO.G
NANNARONE, S
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (16) : 1170 - +
[4] CHIAROTTI G, 1971, PHYS REV B, V4, P3396
[5] SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 951 - 957
[6] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS
EASTMAN, DE
FREEOUF, JL
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1624 - 1627
[7] SURFACE OPTICAL-CONSTANTS OF SILICON AND GERMANIUM DERIVED FROM ELECTRON-ENERGY-LOSS SPECTROSCOPY
FROITZHEIM, H
IBACH, H
MILLS, DL
[J]. PHYSICAL REVIEW B, 1975, 11 (12): : 4980 - 4988
[8] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE
GREGORY, PE
SPICER, WE
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2370 - 2381
[9] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[10] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION
INKSON, JC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08): : 1350 - 1362