SPECTRAL DEPENDENCE OF 1/F-GAMMA NOISE ON GATE BIAS IN N-MOSFETS

被引：89

作者：

CELIKBUTLER, Z

HSIANG, TY

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 04期

关键词：

D O I：

10.1016/0038-1101(87)90171-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：419 / 423

页数：5

共 24 条

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