EFFECTS OF SUBSTRATE ON SURFACE STATE NOISE IN SILICON MOS FETS

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +

[3] THEORY OF LOW FREQUENCY NOISE IN SI MOSTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 631 - +

[4] A POSSIBLE MECHANISM FOR 1/F NOISE GENERATION IN SEMICONDUCTOR FILAMENTS [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1569 - 1569

[5] Burstein E., 1957, SEMICONDUCTOR SURFAC

[6] CORRELATION OF EXPERIMENTS WITH A 2-SECTION-MODEL THEORY OF SATURATION DRAIN CONDUCTANCE OF MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1149 - +

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[8] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &

[9] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[10] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) : 481 - +

[3] THEORY OF LOW FREQUENCY NOISE IN SI MOSTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (05) : 631 - +

[4] A POSSIBLE MECHANISM FOR 1/F NOISE GENERATION IN SEMICONDUCTOR FILAMENTS [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1569 - 1569

[5] Burstein E., 1957, SEMICONDUCTOR SURFAC

[6] CORRELATION OF EXPERIMENTS WITH A 2-SECTION-MODEL THEORY OF SATURATION DRAIN CONDUCTANCE OF MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1149 - +

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (09) : 797 - &

[8] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &

[9] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[10] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +