OPTOELECTRONIC COMPONENTS FOR MULTIGIGABIT SYSTEMS

被引：5

作者：

GOODFELLOW, RC

DEBNEY, BT

REES, GJ

BUUS, J

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1109/JLT.1985.1074343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1170 / 1179

页数：10

共 27 条

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SU, CB ;

LANZISERA, V ;

POWAZINIK, W ;

MELAND, E ;

OLSHANSKY, R ;

LAUER, RB .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :344-346

[22] Q-SWITCHING OF LOW-THRESHOLD BURIED-HETEROSTRUCTURE DIODE-LASERS AT 10-GHZ [J].

TSANG, DZ ;

WALPOLE, JN ;

LIAU, ZL ;

GROVES, SH ;

DIADIUK, V .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :204-206

[23] 20 GHZ ACTIVE MODE-LOCKING OF A 1.55 MU-M INGAASP LASER [J].

TUCKER, RS ;

KOROTKY, SK ;

EISENSTEIN, G ;

KOREN, U ;

STULZ, LW ;

VESELKA, JJ .

ELECTRONICS LETTERS, 1985, 21 (06) :239-240

[24] OPTIMIZED DESIGN AND FABRICATION OF HIGH-SPEED AND HIGH-RADIANCE INGAASP/INP DH LED IN THE 1-MUM WAVELENGTH REGION [J].

WADA, O ;

HAMAGUCHI, H ;

NISHITANI, Y ;

SAKURAI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1454-1462

[25]

WANG SY, 1983, ELECTRON LETT, V19

[26]

WIGHT DR, 1985, NOV IEEE C HET OPT H

[27]

1434961

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