12.5-GHZ DIRECT MODULATION BANDWIDTH OF VAPOR-PHASE REGROWN 1.3-MU-M INGAASP BURIED HETEROSTRUCTURE LASERS

被引：31

作者：

SU, CB

LANZISERA, V

POWAZINIK, W

MELAND, E

OLSHANSKY, R

LAUER, RB

机构：

[1] GTE Lab Inc, Waltham, MA, USA, GTE Lab Inc, Waltham, MA, USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 04期

关键词：

MODULATION;

D O I：

10.1063/1.95625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A small-signal modulation bandwidth of 12. 5 GHz is reported for vapor phase regrown 1. 3- mu m InGaAsP buried heterostructure (BH) lasers operated at a bias optical power of only 6. 9 mw/facet. The bandwidth per square root of bias optical power is a factor of 1. 6 higher than previous best results. The wide modulation bandwidth is attained by increasing the p-doping level in the active region and by the choice of short cavity length. The device is grown on a conductive substrate, indicating that it is unnecessary to use a semi-insulating substrate to obtain flat optical response in vapor phase regrown BH lasers.

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页码：344 / 346

页数：3

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