GROWTH AND PROPERTIES OF VACUUM-DEPOSITED CULNSE2 THIN-FILMS

被引：116

作者：

KAZMERSKI, LL ^{[1
]}

AYYAGARI, MS ^{[1
]}

WHITE, FR ^{[1
]}

SANBORN, GA ^{[1
]}

机构：

[1] UNIV MAINE,DEPT ELECT ENGN,ORONO,ME 04473

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.568808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：139 / 144

页数：6

共 29 条

[11] ROLE OF DEFECTS IN DETERMINING ELECTRICAL PROPERTIES OF CDS THIN-FILMS .1. GRAIN-BOUNDARIES AND SURFACES [J].

KAZMERSKI, LL ;

ALLEN, CW ;

BERRY, WB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3515-+

[12] CUINS2 THIN-FILMS - PREPARATION AND PROPERTIES [J].

KAZMERSKI, LL ;

AYYAGARI, MS ;

SANBORN, GA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4865-4869

[13] CUGASE2 AND AGINSE2 - PREPARATION AND PROPERTIES OF SINGLE CRYSTALS [J].

LERNER, LS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (01) :1-&

[14]

LOFERSKI J, 1975, 11TH P IEEE PHOT SPE

[15]

Maissel L.I., 1970, HDB THIN FILM TECHNO

[16] JUNCTION ELECTROLUMINESCENCE IN CULNSE2 [J].

MIGLIORATO, P ;

TELL, B ;

SHAY, JL ;

KASPER, HM .

APPLIED PHYSICS LETTERS, 1974, 24 (05) :227-228

[17]

Palatnik L. S., 1967, SOV PHYS DOKL, P503

[18] CRYSTAL DATA FOR CUINSE2 [J].

PARKES, J ;

TOMLINSO.RD ;

HAMPSHIR.MJ .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (OCT1) :414-416

[19] FABRICATION OF P AND N TYPE SINGLE-CRYSTALS OF CUINSE2 [J].

PARKES, J ;

TOMLINSON, RD ;

HAMPSHIRE, MJ .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (04) :315-318

[20] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1956, 104 (06) :1508-1516

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