NEGATIVE PHOTOELECTRIC EFFECTS IN P-T1GASE2

被引：4

作者：

ABDULLAYEVA, SG

ALIYEV, VA

机构：

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1983年 / 8卷 / 03期

关键词：

D O I：

10.1016/0254-0584(83)90040-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：279 / 287

页数：9

共 15 条

[1]

ABDULLAYEV GB, 1975, PHYSICS SELENIUM

[2] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

CHANG, MCP ;

PENCHINA, CM ;

MOORE, JS .

PHYSICAL REVIEW B, 1971, 4 (04) :1229-&

[3]

HARTKE JL, 1965, PHYS REV, V139, P970

[4] DEEP ENERGY LEVELS IN HIGH RESISTANCE REGION AT GAAS VAPOR EPITAXIAL FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) :638-&

[5]

Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF

[6] PROPERTIES OF GERMANIUM DOPED WITH IRON .2. PHOTOCONDUCTIVITY [J].

NEWMAN, R ;

TYLER, WW .

PHYSICAL REVIEW, 1954, 96 (04) :882-886

[7] PHOTOCONDUCTIVITY IN GOLD-GERMANIUM ALLOYS [J].

NEWMAN, R .

PHYSICAL REVIEW, 1954, 94 (02) :278-285

[8] ENERGY LEVELS AND NEGATIVE PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

PENCHINA, CM ;

MOORE, JS ;

HOLONYAK, N .

PHYSICAL REVIEW, 1966, 143 (02) :634-&

[9]

PETROSYAN SG, 1976, FIZ TEKH POLUPROV, V10, P1355

[10] ELECTRICAL CONDUCTION IN SINGLE CRYSTAL TRIGONAL SELENIUM [J].

ROBERTS, GG .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (11) :1348-&

← 1 2 →