TIME-OF-FLIGHT, ION-BEAM SURFACE-ANALYSIS FOR IN-SITU CHARACTERIZATION OF THIN-FILM GROWTH-PROCESSES

被引：23

作者：

KRAUSS, AR

AUCIELLO, O

SCHULTZ, JA

机构：

[1] MICROELECTR CTR N CAROLINA,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709

[2] ARGONNE NATL LAB,DIV CHEM,ARGONNE,IL 60439

[3] IBM CORP,ARMONK,NY

[4] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

[5] USN,RES LABS,WASHINGTON,DC

[6] ARGONNE NATL LAB,DEPT ENERGY MOUND,ARGONNE,IL 60439

[7] HITACHI LTD,CENT RES LABS,TOKYO,JAPAN

[8] BEER SHEVA NUCL RES CTR,BEER SHEVA,ISRAEL

来源：

MRS BULLETIN | 1995年 / 20卷 / 05期

关键词：

D O I：

10.1557/S0883769400044845

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：18 / 23

页数：6

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