EVIDENCE FOR CORRELATION-EFFECTS IN THE HYPERFINE-STRUCTURE OF THE NEGATIVE VACANCY IN SILICON

被引:18
作者
LANNOO, M
机构
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 05期
关键词
D O I
10.1103/PhysRevB.28.2403
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:2403 / 2410
页数:8
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