ANALYTICAL EXPRESSION FOR THE POTENTIAL OF GUARD RINGS OF DIODES OPERATING IN THE PUNCHTHROUGH MODE

被引：18

作者：

BOISSON, V

LEHELLEY, M

CHANTE, JP

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：838 / 840

页数：3

共 7 条

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TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

ANANTHARAM, V ;

BHAT, KN .

[3]

BOISSON V, 1983, NASECODE, V3, P91

[4] BLOCKING CAPABILITY OF PLANAR DEVICES WITH FIELD LIMITING RINGS [J].

BRIEGER, KP ;

GERLACH, W ;

PELKA, J .

FULOP, W .

[6] HIGH-VOLTAGE PLANAR P-N JUNCTIONS [J].

KAO, YC ;

WOLLEY, ED .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1409-+

[7]

WHIGHT KR, 1983, NASECODE, V3, P299