CARBON DOPING OF ALAS USING CCL4 AND CBR4 DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：5

作者：

ABERNATHY, CR ^{[1
]}

MACKENZIE, JD ^{[1
]}

HOBSON, WS ^{[1
]}

WISK, PW ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CBr4 and CCl4 have been investigated as carbon doing sources for deposition of AlAs:C by metalorganic molecular-beam epitaxy. Through the use of CBr4, hole concentrations up to 4.5 X 10(19) cm(-3) were achieved in as-deposited AlAs layers. Attempts to increase the hole concentration in as-grown material beyond this level resulted in a decrease in the hole concentration even though (SIMS) and (XRD) analysis show the carbon concentration to increase with increasing dopant flow. By annealing the AlAs after growth, the maximum achievable hole concentration could be increased to 1.1X10(20) cm(-3), which is the highest yet reported for AlAs:C. This increase in p after annealing is believed due to removal of hydrogen from the lattice which passivates the carbon acceptor. Neither carbon source increased the oxygen background beyond the level of similar to 5X10(17) cm(-3) normally observed in AlAs grown under similar conditions. These compounds do introduce Cl and Br, and reduce the Al incorporation rate due to parasitic etching reactions with the adsorbed halogen. (C) 1994 American Institute of Physics.

引用

页码：2205 / 2207

页数：3

共 14 条

[1] INCORPORATION OF CARBON IN HEAVILY DOPED ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].