LASER-RECRYSTALLIZED POLYSILICON RESISTORS FOR SENSING AND INTEGRATED-CIRCUITS APPLICATIONS

被引：18

作者：

BINDER, J

HENNING, W

OBERMEIER, E

SCHABER, H

CUTTER, D

机构：

[1] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNICH 60,FED REP GER

[2] SIEMENS AG ZT MUNCHEN,D-8000 MUNICH 83,FED REP GER

来源：

SENSORS AND ACTUATORS | 1983年 / 4卷 / 04期

关键词：

D O I：

10.1016/0250-6874(83)85064-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

RESISTORS

引用

页码：527 / 536

页数：10

共 18 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J].

BULLIS, WM ;

BREWER, FH ;

KOLSTAD, CD ;

SWARTZEN.LJ .

SOLID-STATE ELECTRONICS, 1968, 11 (07) :639-&

[3]

DEGRAFF HC, IEDM 1980

[4]

FUGGIN F, 1970, SOLID STATE ELECTRON, V13, P1125

[5] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[6] LOW-COST PRESSURE FORCE TRANSDUCER WITH SILICON THIN-FILM STRAIN-GAUGES [J].

GERMER, W ;

TODT, W .

SENSORS AND ACTUATORS, 1983, 4 (02) :183-189

[7]

GIBBONS JF, 1981, LASER ELECTRON BEAM, P449

[8]

KELLER HW, 1974, MESSEN PRUFEN, V89

[9] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].

LU, NCC ;

GERZBERG, L ;

LU, CY ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830

[10]

Obermeier E., 1982, NTG-Fachberichte, V79, P49

← 1 2 →