GETTERING OF COPPER TO HYDROGEN-INDUCED CAVITIES IN SILICON

被引：108

作者：

WONGLEUNG, J ^{[1
]}

ASCHERON, CE ^{[1
]}

PETRAVIC, M ^{[1
]}

ELLIMAN, RG ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECTR MAT ENGN,CANBERRA,ACT 0200,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.113246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen implantation and subsequent thermal annealing is found to result in a well-defined band of cavities in Si. This band is an extremely efficient gettering layer for Cu which is also introduced into the near surface of Si by ion implantation. Profiling of implanted Cu indicates that ∼95% of an initial 3×1015cm-2 Cu implant is redistributed following annealing at a temperature of 780°C from a near-surface damaged layer to a narrow band of cavities of width ∼1000 Å at a depth of ∼1 μm. Furthermore, the Si between the surface and the cavity band is essentially defect-free and that some cavities contain the bulk Cu3Si phase.© 1995 American Institute of Physics.

引用

页码：1231 / 1233

页数：3

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