PHYSICAL-PROPERTIES OF GALLIUM INDIUM NITRIDE FILMS PREPARED BY PHOTO-ASSISTED MOVPE

被引：2

作者：

NAGATOMO, T

OMOTO, O

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1995年 / 5卷 / C5期

关键词：

D O I：

10.1051/jphyscol:19955139

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D-2) lamp. The dissociation of NH3 is promoted by irradiation with a D-2 lamp aid indium atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800 degrees C increasing the flow rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800 degrees C is 14 times as great as that of 675 degrees C.

引用

页码：1173 / 1178

页数：6

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