STUDY OF MICROSTRUCTURAL CHANGES IN SILICON SINGLE-CRYSTALS SUBJECT TO HIGH ELECTRIC-FIELDS BY USING A HIGH-RESOLUTION X-RAY-DIFFRACTION METHOD

被引：8

作者：

LAL, K ^{[1
]}

THOMA, P ^{[1
]}

机构：

[1] PHYS TECH BUNDESANSTALT,D-3300 BRUNSWICK,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 02期

关键词：

D O I：

10.1002/pssa.2210800211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：491 / 502

页数：12

共 19 条

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LAL, K ;

SINGH, BP .

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[8] CHARACTERIZATION OF NEARLY PERFECT ALKALI-HALIDE CRYSTALS BY HIGH-RESOLUTION DIFFUSE-X-RAY SCATTERING MEASUREMENTS [J].

LAL, K ;

SINGH, BP .

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[9] HIGH-RESOLUTION EXPERIMENTAL-TECHNIQUES OF MEASUREMENT OF DIFFUSE X-RAY-SCATTERING FROM SINGLE-CRYSTALS [J].

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