EFFECT OF POLAR VIBRATIONS OF THE CRYSTAL-LATTICE ON THE PLASMA FREQUENCY OF HEAVILY-DOPED SEMICONDUCTORS AND CORRECTION FOR CALCULATION OF CARRIER CONCENTRATION

被引:3
作者
BAOMING, W
GUANGYIN, Z
机构
来源
INFRARED PHYSICS | 1983年 / 23卷 / 06期
关键词
D O I
10.1016/0020-0891(83)90006-4
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
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页码:329 / 331
页数:3
相关论文
共 9 条
[1]   INFRARED TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION [J].
BLACK, JF ;
LANNING, E ;
PERKOWITZ, S .
INFRARED PHYSICS, 1970, 10 (02) :125-+
[2]   QUANTITATIVE MEASUREMENT OF SEMICONDUCTOR HOMOGENEITY FROM PLASMA EDGE [J].
EDWARDS, DF ;
MAKER, PD .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2466-&
[3]   MEASUREMENT OF CARRIER CONCENTRATION BY IR REFLECTANCE - SI AND GAAS [J].
GOPAL, V .
INFRARED PHYSICS, 1981, 21 (02) :101-104
[4]   ANALYSIS OF IR PLASMA REFLECTIVITY SPECTRA - SURFACE CHARACTERIZATION [J].
GOPAL, V .
INFRARED PHYSICS, 1981, 21 (03) :159-165
[5]  
HAYES W, 1978, SCATTERING LIGHT CRY, P165
[6]   INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS [J].
HOLM, RT ;
GIBSON, JW ;
PALIK, ED .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :212-223
[8]   USE OF PLASMA EDGE REFLECTION MEASUREMENTS IN STUDY OF SEMICONDUCTORS [J].
MOSS, TS ;
HAWKINS, TDF ;
BURRELL, GJ .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (05) :1435-&
[9]  
Moss TS., 1959, OPTICAL PROPERTIES S