共 20 条
[1]
OPTICAL-CONSTANTS OF VARIOUS HEAVILY DOPED PARA-TYPE SILICON-CRYSTALS AND NORMAL-TYPE SILICON-CRYSTALS OBTAINED BY KRAMERS-KRONIG ANALYSIS
[J].
INFRARED PHYSICS,
1977, 17 (05)
:319-329
[2]
DETERMINATION OF EFFECTIVE MASS VALUES BY A KRAMERS-KRONIG ANALYSIS FOR VARIOUSLY DOPED SILICON-CRYSTALS
[J].
INFRARED PHYSICS,
1977, 17 (02)
:111-119
[3]
INFRARED TECHNIQUES FOR SEMICONDUCTOR CHARACTERIZATION
[J].
INFRARED PHYSICS,
1970, 10 (02)
:125-+
[7]
KUKHARSK.AA, 1966, FIZ TVERD TELA+, V8, P603
[9]
USE OF PLASMA EDGE REFLECTION MEASUREMENTS IN STUDY OF SEMICONDUCTORS
[J].
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS,
1968, 1 (05)
:1435-&