METAL VAPOR VACUUM-ARC ION-IMPLANTATION FOR SEEDING OF ELECTROLESS CU PLATING

被引：13

作者：

QIAN, XY ^{[1
]}

KIANG, MH ^{[1
]}

CHEUNG, NW ^{[1
]}

BROWN, IG ^{[1
]}

GODECHOT, X ^{[1
]}

GALVIN, JE ^{[1
]}

MACGILL, RA ^{[1
]}

YU, KM ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96302-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A metal vapor vacuum are (MEVVA) ion source has been used to implant Pd into SiO2 substrates. The ion implanted area formed a seeding layer on which a Cu film was successfully plated through an electroless plating process. It was found that the required Pd dose for Cu plating to occur is on the order of 3 x 10(15) cm-2 when the implantation was performed with a 20 kV extraction voltage. Taking advantage of the large pulsed ion current capability (up to 1 A) of the MEVVA ion source, the needed Pd dose for seeding was achieved in minutes. With direct Pd implantation, an intermediate activation step using PdCl2 solution can be eliminated. The Cu plating rate was not a sensitive function of temperature and no incubation period was found in our experiments.

引用

页码：893 / 897

页数：5

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