THE EFFECTS OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF PLASMA-ENHANCED CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE

被引：16

作者：

BROWN, WD ^{[1
]}

KHALIQ, MA ^{[1
]}

机构：

[1] MANKATO STATE UNIV,DEPT ELECT ENGN & ELECTR ENGN TECHNOL,MANKATO,MN 56001

来源：

THIN SOLID FILMS | 1990年 / 186卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90501-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Plasma-enhanced chemically vapor-deposited silicon nitride films have been rapidly thermal annealed at temperatures from 400 to 800 °C. A correlation between physical and memory properties of the material and the loss of hydrogen has been observed. The progressive loss of hydrogen results in film densification and an increase in both refractive index and absorption edge. Memory performance of the films is degraded by annealing and appears to be dependent on the ratio of SiH to NH. Additionally, certain combinations of anneal time and temperature result in stabilization of the nitride. The film resistivity decreases with annealing and is indicative of an increase in silicon dangling bonds created by hydrogen loss. © 1990.

引用

页码：73 / 85

页数：13

共 30 条

[1]

ABELES F, 1972, OPTICAL PROPERTIES S, P279

[2]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[3] RAPID THERMAL ANNEALED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SIO2 AS GATE DIELECTRIC IN SILICON MOSFETS [J].

ANG, S ;

WILSON, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1254-1258

[4] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J].

BAILEY, RS ;

KAPOOR, VJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :484-487

[5]

BROWN WD, 1988, OCT FALL M EL SOC CH

[6]

DOWNEY DF, 1982, SOLID STATE TECH SEP, P87

[7]

FUJITA S, 1985, J ELECTROCHEM SOC, V132, P397

[8] CHARGE-TRAPPING PROPERTIES OF ULTRATHIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].

HORI, T ;

IWASAKI, H ;

TSUJI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :904-910

[9]

JONES BL, 1985, J NONCRYST SOLIDS, V77, P961

[10] MEMORY CHARACTERISTICS OF MNOS CAPACITORS FABRICATED WITH PECVD SILICON-NITRIDE [J].

KHALIQ, MA ;

SHAMS, QA ;

BROWN, WD ;

NASEEM, HA .

SOLID-STATE ELECTRONICS, 1988, 31 (08) :1229-1233

← 1 2 3 →