RAPID THERMAL ANNEALED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SIO2 AS GATE DIELECTRIC IN SILICON MOSFETS

被引：26

作者：

ANG, S

WILSON, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 05期

关键词：

D O I：

10.1149/1.2100652

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1254 / 1258

页数：5

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[7] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES [J].

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